A study of the effects of ALD growth temperature on Al2O3 gate oxide by C-V and G-V measurements

Atomic layer deposition (ALD) was used to grow aluminum oxide (Al2O3) on n-type Si (100) substrates at several temperatures 100-200◦C. The effect of growth temperature on the Al2O3-Si interface was probed using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. From these measurements, oxide charge density, interface-trapped charge density, and average interface electron trap cross section were studied. As a result of incomplete experimental methods, the dependence of these parameters on growth temperature has been analyzed with only rough approximations. While the data presented here are generally inconclusive, some use might be made of the considerable number of literature results that have been summarized. Lastly, the reader should note that the present study was conducted as part of a 10-week Research Experience for Undergraduates (REU) program at UCLA.